| 图片 | 型号 | 描述 | 参考价格 | 库存数量 | 询价 |
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann
PDF数据手册
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1:¥139.5437
10:¥128.3228
25:¥123.0231
100:¥108.3444
600:¥96.4342
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参考库存:32546
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1:¥82.2979
10:¥74.3766
25:¥70.9188
100:¥61.5511
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参考库存:2708
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MOSFET N-channel 600 V, 0.155 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
PDF数据手册
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1:¥28.6568
10:¥24.3628
100:¥21.131
250:¥19.9784
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参考库存:2494
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600:¥58.3984
1,200:¥53.562
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参考库存:31861
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1:¥22.3627
10:¥18.984
100:¥16.4415
250:¥15.594
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参考库存:1815
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1:¥22.3627
10:¥18.984
100:¥16.4415
250:¥15.594
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参考库存:11312
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3,000:¥6.667
6,000:¥6.4184
9,000:¥6.1698
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参考库存:51767
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1:¥111.9604
10:¥102.9656
25:¥98.6603
100:¥86.9083
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参考库存:11075
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3,000:¥6.9495
6,000:¥6.7009
9,000:¥6.441
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参考库存:51463
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1:¥33.5836
10:¥28.589
100:¥24.747
250:¥23.5153
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参考库存:10290
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1:¥3.9211
10:¥3.1979
100:¥1.9549
1,000:¥1.5029
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参考库存:9647
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1:¥54.8615
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参考库存:9553
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射频金属氧化物半导体场效应(RF MOSFET)晶体管
PDF数据手册
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1:¥494.3863
5:¥483.3236
10:¥464.4187
25:¥449.4349
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参考库存:49939
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1:¥36.6572
10:¥31.1202
100:¥27.0522
250:¥25.6623
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参考库存:9230
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2,000:¥5.5257
4,000:¥4.9042
10,000:¥4.7234
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参考库存:49198
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IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
PDF数据手册
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1:¥21.5152
10:¥18.2834
100:¥14.5996
500:¥12.8368
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参考库存:8055
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MOSFET Nchanl 80 V 0035 Ohm typ 64 A Pwr MOSFET
PDF数据手册
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1:¥26.5889
10:¥22.5887
100:¥19.5942
250:¥18.5998
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参考库存:48463
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IGBT 模块 SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge
PDF数据手册
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1:¥62.0822
10:¥56.1723
25:¥53.562
100:¥46.4882
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参考库存:8951
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1:¥8.9948
10:¥7.6388
100:¥5.876
500:¥5.1867
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参考库存:6898
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3,000:¥5.4014
6,000:¥5.198
9,000:¥4.9946
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参考库存:47368
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